GALLIUM TELLURIDES GA2TE3 AND GA2TE AND RHENIUM TELLURIDES RETE2 AND RE2TE

被引：5
|
作者：
MONTIGNIE, E
机构：
来源：
ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE | 1969年 / 366卷 / 1-2期
关键词：
D O I：
10.1002/zaac.19693660113
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
引用
收藏
页码：111 / +
页数：1
相关论文
共 50 条
  • [31] NATURE OF THE ELECTRICAL INACTIVITY OF TIN AND IRON IMPURITY ATOMS IN IN2TE3 AND GA2TE3
    NASREDINOV, FS
    MASTEROV, VF
    SAIDOV, CS
    SEREGIN, PP
    TROITSKAYA, NN
    TSCHIRNER, HU
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 107 (01): : 291 - 298
  • [32] ELECTRICAL AND OPTICAL-PROPERTIES OF SINGLE-CRYSTAL IN2TE3 AND GA2TE3
    SEN, S
    BOSE, DN
    SOLID STATE COMMUNICATIONS, 1984, 50 (01) : 39 - 42
  • [33] SIMPLE PREPARATIONS OF THE CESIUM TELLURIDES CS2TE AND CS2TE3
    HOBBS, JW
    PULHAM, RJ
    JOURNAL OF CHEMICAL RESEARCH-S, 1994, (02): : 68 - 69
  • [34] The phase diagram of the quasibinary system Ga2Te3/Ga2Se3
    Kerkhoff, M
    Leute, V
    JOURNAL OF ALLOYS AND COMPOUNDS, 2004, 381 (1-2) : 124 - 129
  • [35] CHANGE IN ELECTRICAL CONDUCTIVITY AND THERMOELECTROMOTIVE FORCE OF IN2TE3 AND GA2TE3 UPON MELTING
    ZHUZE, VP
    SHELYKH, AI
    SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (04): : 942 - +
  • [36] SQUARE-PLANAR-COORDINATED TELLURIDES - THE ELECTRONIC-STRUCTURES OF RE2TE5, GA2TE5 AND K2SNTE5
    BULLETT, DW
    SOLID STATE COMMUNICATIONS, 1984, 51 (01) : 51 - 53
  • [37] Electrical and optical properties of amorphous Ga2Te3 films
    Bekheet, AE
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2001, 16 (03): : 187 - 193
  • [38] Effect of Vacancy Distribution on the Thermal Conductivity of Ga2Te3 and Ga2Se3
    Chang-eun Kim
    Ken Kurosaki
    Manabu Ishimaru
    Hiroaki Muta
    Shinsuke Yamanaka
    Journal of Electronic Materials, 2011, 40 : 999 - 1004
  • [39] X-ray diffraction studies of Ga2Te3
    Singh, DP
    Khan, MY
    INDIAN JOURNAL OF ENGINEERING AND MATERIALS SCIENCES, 2001, 8 (01) : 46 - 49
  • [40] Single crystal precession study of Ga2Te3 chalcogenide
    Singh, DP
    Pant, RP
    Suri, DK
    PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, 2000, 3975 : 1452 - 1455
12345