CONDUCTION-BAND AND VALENCE-BAND EFFECTIVE MASSES IN SPONTANEOUSLY ORDERED GAINP2

被引:25
|
作者
ZHANG, Y
MASCARENHAS, A
机构
[1] National Renewable Energy Laboratory, Golden, CO 80401
关键词
D O I
10.1103/PhysRevB.51.13162
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An eight-band kp model is developed for zinc-blende semiconductor alloys that exhibit spontaneous CuPt ordering. Energy dispersions and effective masses are calculated analytically for the conduction band and valence band as a function of the degree of ordering. All the effective-mass tensors are found to be diagonal and the energy dispersions are ellipsoidal to terms quadratic in the wave vector when the axis of quantization (the z direction) is chosen along the ordering direction. The change of effective masses is found to satisfy a sum rule when ordering is weak. Numerical results are given for the ordered GaInP2 alloy. We find that, as the order parameter increases, along the ordering direction, m is unchanged for the heavy-hole band, increases for the light-hole band, and decreases for the spin-orbit split-off band. In the plane perpendicular to the ordering direction, m for the heavy- and light-hole bands decreases, whereas it increases for the split-off band. For the conduction band, both m and m decrease. © 1995 The American Physical Society.
引用
收藏
页码:13162 / 13173
页数:12
相关论文
共 50 条
  • [41] Improved model for the stress-induced leakage current in thin silicon dioxide based on conduction-band electron and valence-band electron tunneling
    Chim, WK
    Lim, PS
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (03) : 1577 - 1588
  • [42] THE RELATIVISTIC VALENCE AND CONDUCTION-BAND EDGES OF TRIGONAL TE AND SE
    VONBOEHM, J
    ISOMAKI, HM
    SOLID STATE COMMUNICATIONS, 1981, 40 (04) : 495 - 497
  • [43] Transistor-based evaluation of conduction-band offset in GaInP/GaAs heterojunction
    Faleh, MS
    Tasselli, J
    Bailbe, JP
    Marty, A
    APPLIED PHYSICS LETTERS, 1996, 69 (09) : 1288 - 1290
  • [44] PHOTOEMISSION STUDIES OF GRAPHITE HIGH-ENERGY CONDUCTION-BAND AND VALENCE-BAND STATES USING SOFT-X-RAY SYNCHROTRON RADIATION EXCITATION
    BIANCONI, A
    HAGSTROM, SBM
    BACHRACH, RZ
    PHYSICAL REVIEW B, 1977, 16 (12): : 5543 - 5548
  • [45] CONDUCTION AND VALENCE-BAND PHOTOEMISSION MECHANISMS IN 2-DIMENSIONAL-3-DIMENSIONAL STRUCTURES
    LIN, BSM
    HWANG, J
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (04) : 2442 - 2447
  • [46] VALENCE-BAND STRUCTURE OF PTSB2
    DAMON, DH
    EMTAGE, PR
    MILLER, RC
    PHYSICAL REVIEW B, 1972, 5 (06): : 2175 - &
  • [47] STRUCTURE OF THE CONDUCTION-BAND OF AGBITE2
    ALIEV, SA
    BAGIROV, DA
    ZEINALOV, SA
    INORGANIC MATERIALS, 1988, 24 (07) : 1036 - 1038
  • [48] Valence-band effective-potential evolution for coupled holes
    Flores-Godoy, J. J.
    Mendoza-Alvarez, A.
    Diago-Cisneros, L.
    Fernandez-Anaya, G.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2013, 250 (07): : 1339 - 1344
  • [49] DETERMINATION OF CONDUCTION-BAND EFFECTIVE MASSES OF GERMANIUM-SILICON ALLOY BY INFRARED CYCLOTRON-RESONANCE
    FINK, D
    BRAUNSTEIN, R
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1976, 73 (01): : 361 - 370
  • [50] RESONANT ZENER TUNNELING OF ELECTRONS ACROSS THE BAND-GAP BETWEEN BOUND-STATES IN THE VALENCE-BAND AND CONDUCTION-BAND QUANTUM WELLS IN A MULTIPLE QUANTUM-WELL STRUCTURE
    ALLAM, J
    BELTRAM, F
    CAPASSO, F
    CHO, AY
    JOURNAL DE PHYSIQUE, 1987, 48 (C-5): : 439 - 442