SPECTRAL RESPONSE OF AN SIT IMAGE SENSOR WITH AN IMPROVED STRUCTURE

被引：0
|
作者：
NISHIZAWA, J [1 ]
TAMAMUSHI, T [1 ]
USHIROZAWA, M [1 ]
KIM, JH [1 ]
机构：
[1] SEMICONDUCTOR RES INST,KAWAUCHI,SENDAI 980,JAPAN
来源：
IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 04期
关键词：
D O I：
10.1109/55.61776
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A static-induction-transistor (SIT) image sensor with an improved structure has been fabricated. This image sensor is characterized by an n+ buried drain region. This region acts as a filter to eliminate the optical information at longer wavelengths. As a result, a spectral response close to that of the human eye was obtained. This result was also proved theoretically. © 1990 IEEE
引用
收藏
页码：143 / 145
页数：3
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