AN INVESTIGATION OF THE ELECTRONIC-STRUCTURE OF OSMIUM-TETROXIDE BY PHOTOELECTRON-SPECTROSCOPY WITH VARIABLE PHOTON ENERGY

被引：16

作者：

GREEN, JC ^{[1
]}

KALTSOYANNIS, N ^{[1
]}

SZE, KH ^{[1
]}

MACDONALD, MA ^{[1
]}

机构：

[1] SERC,DARESBURY LAB,WARRINGTON WA4 4AD,CHESHIRE,ENGLAND

来源：

CHEMICAL PHYSICS LETTERS | 1990年 / 175卷 / 04期

关键词：

D O I：

10.1016/0009-2614(90)80125-W

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Relative partial photoionization cross sections and photoelectron branching ratios have been obtained for the valence bands of osmium tetroxide in the ionization energy range 12 to 18 eV. The photon energies used ranged between 24 and 100 eV. The ionization cross sections of the 2t2 and 2a1 orbitals show evidence of substantial metal character establishing strong Os-O sigma-bonding. Very little evidence is found for pi-bonding.

引用

页码：359 / 363

页数：5

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