PHOTO-REDUCTION AT ILLUMINATED P-TYPE SEMICONDUCTING SILICON PHOTOELECTRODES - EVIDENCE FOR FERMI LEVEL PINNING

被引：160
|
作者：
BOCARSLY, AB [1 ]
BOOKBINDER, DC [1 ]
DOMINEY, RN [1 ]
LEWIS, NS [1 ]
WRIGHTON, MS [1 ]
机构：
[1] MIT,DEPT CHEM,CAMBRIDGE,MA 02139
来源：
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 1980年 / 102卷 / 11期
关键词：
D O I：
10.1021/ja00531a003
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：3683 / 3688
页数：6
相关论文
共 50 条
  • [21] Fermi energy pinning at the surface during growth of n- and p-type GaAs
    Chen, CY
    Cohen, RM
    Simons, DS
    Chi, PH
    APPLIED PHYSICS LETTERS, 1997, 70 (08) : 1005 - 1007
  • [22] SYNTHESIS AND CHARACTERIZATION OF A PHOTOSENSITIVE INTERFACE FOR HYDROGEN GENERATION - CHEMICALLY MODIFIED P-TYPE SEMICONDUCTING SILICON PHOTO-CATHODES
    BOOKBINDER, DC
    BRUCE, JA
    DOMINEY, RN
    LEWIS, NS
    WRIGHTON, MS
    PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA-PHYSICAL SCIENCES, 1980, 77 (11): : 6280 - 6284
  • [23] CALCULATION OF THE FERMI LEVEL, FERMI DISTRIBUTION, AND ACTIVITY COEFFICIENT OF p-TYPE SiC:Be.
    Safaraliev, G.K.
    Tairov, Yu.M.
    Tsvetkov, V.F.
    Kriger, Yu.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (04): : 464 - 465
  • [24] ELECTROCATALYTIC REDUCTION OF CARBON-DIOXIDE AT ILLUMINATED PARA-TYPE SILICON SEMICONDUCTING ELECTRODES
    BRADLEY, MG
    TYSAK, T
    GRAVES, DJ
    VLACHOPOULOS, NA
    JOURNAL OF THE CHEMICAL SOCIETY-CHEMICAL COMMUNICATIONS, 1983, (07) : 349 - 350
  • [25] Fermi-level pinning by carrier compensating midgap donor defect band in homoepitaxially grown p-type ZnO by MBE
    Masamoto, T.
    Noda, K.
    Maejima, T.
    Natsume, R.
    Matsuo, T.
    Akiyama, A.
    Yukue, T.
    Hiroe, S.
    Abe, T.
    Kasada, H.
    Harada, Y.
    Ando, K.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 7-8, 2014, 11 (7-8): : 1353 - 1356
  • [26] THE GOLD DONOR AND ACCEPTOR LEVEL IN P-TYPE SILICON
    VANSTAA, P
    KASSING, R
    SOLID STATE COMMUNICATIONS, 1984, 50 (12) : 1051 - 1055
  • [27] Fabrication of p-type silicon nanowire array based photoelectrodes for the efficient photoelectrocatalytic reduction of CO2 to fuels and chemicals
    Wei, Longfu
    Li, Rongxing
    Fan, Qizhe
    Yu, Changlin
    Tan, Peng
    SUSTAINABLE ENERGY & FUELS, 2022, 6 (08) : 1854 - 1865
  • [28] CALCULATION OF FERMI LEVEL, FERMI DISTRIBUTION, AND ACTIVITY-COEFFICIENT OF P-TYPE SIC=B
    SAFARALIEV, GK
    TAIROV, YM
    TSVETKOV, VF
    KRIGER, Y
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (02): : 226 - 227
  • [29] CALCULATION OF FERMI LEVEL, FERMI DISTRIBUTION, AND ACTIVITY-COEFFICIENT OF P-TYPE SIC-BE
    SAFARALIEV, GK
    TAIROV, YM
    TSVETKOV, VF
    KRIGER, Y
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (04): : 464 - 465
  • [30] THE REDUCTION OF CARBON-DIOXIDE AT ILLUMINATED P-TYPE SEMICONDUCTOR ELECTRODES IN NONAQUEOUS MEDIA
    TANIGUCHI, I
    AURIANBLAJENI, B
    BOCKRIS, JOM
    ELECTROCHIMICA ACTA, 1984, 29 (07) : 923 - 932
12345