XPS CHARACTERIZATION OF SILICON ETCHED BY SF6 + N2O AND N2O + O2 RF PLASMAS

被引：0
|
作者：
TZENG, Y [1 ]
LIN, TH [1 ]
TATARCHUK, BJ [1 ]
LITTRELL, DM [1 ]
机构：
[1] AUBURN UNIV,PLASMA PROC LAB,AUBURN,AL 36849
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 11期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C447 / C447
页数：1
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