LOW-TEMPERATURE ION-INDUCED EPITAXIAL-GROWTH OF ALPHA-FESI2 AND CUBIC FESI2 IN SI

被引：52
|
作者：
LIN, XW [1 ]
BEHAR, M [1 ]
DESIMONI, J [1 ]
BERNAS, H [1 ]
WASHBURN, J [1 ]
LILIENTALWEBER, Z [1 ]
机构：
[1] CTR SPECTROMETRIE NUCL & SPECTROMETRIE MASSE,F-91405 ORSAY,FRANCE
来源：
APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 01期
关键词：
D O I：
10.1063/1.109727
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ion-beam-induced epitaxial crystallization of amorphous Si implanted with Fe to 18 at. % peak concentration was studied. The structure of the specimen was characterized using transmission electron microscopy and Rutherford backscattering spectrometry. Both cubic FeSi2 and alpha-FeSi2 were formed in epitaxy with the Si matrix with two types of orientations (fully aligned and twinned). The twins of alpha-FeSi2 and those of cubic FeSi2 were found to have exactly the same type of epitaxial relationship as for the aligned ones. The thermodynamically stable beta-FeSi2 is not formed, demonstrating that ion-beam-induced crystallization can lead to preferential phase formation as well as to epitaxy.
引用
收藏
页码：105 / 107
页数：3
相关论文
共 50 条
  • [1] EPITAXIAL-GROWTH OF ALPHA-FESI2 ON SI(111) AT LOW-TEMPERATURE
    CHEVRIER, J
    STOCKER, P
    VINH, L
    GAY, JM
    DERRIEN, J
    [J]. EUROPHYSICS LETTERS, 1993, 22 (06): : 449 - 454
  • [2] ION-BEAM-INDUCED SIMULTANEOUS EPITAXIAL-GROWTH OF ALPHA AND CUBIC FESI2 IN SI(100) AT 320-DEGREES-C
    DESIMONI, J
    BEHAR, M
    BERNAS, H
    LIN, XW
    LILIENTALWEBER, Z
    WASHBURN, J
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 755 - 758
  • [3] METASTABLE ALPHA-FESI2 FILMS GROWN ON SI(111) AT LOW-TEMPERATURE
    STOCKER, P
    GAY, JM
    NATOLI, JY
    [J]. PHYSICA B, 1994, 198 (1-3): : 240 - 242
  • [4] ALLOTAXIAL GROWTH OF EPITAXIAL SI/FESI2,/SI HETEROSTRUCTURES
    MULLER, O
    MANTL, S
    RADERMACHER, K
    BAY, HL
    CRECELIUS, G
    DIEKER, C
    MESTERS, S
    [J]. APPLIED SURFACE SCIENCE, 1993, 73 : 141 - 145
  • [5] Low temperature growth of β-FeSi2 films on Si(111) by RF magnetron sputtering using a FeSi2 alloy target
    Yoshitake, T
    Hanada, T
    Nagayama, K
    [J]. JOURNAL OF MATERIALS SCIENCE LETTERS, 2000, 19 (07) : 537 - 538
  • [6] Epitaxial growth of Al-doped β-FeSi2 on Si by ion beam synthesis
    [J]. Maeda, Y. (ymaeda@vega.energy.kyoto-u.ac.jp), 1600, Japan Society of Applied Physics (44):
  • [7] Epitaxial growth of Al-doped β-FeSi2 on Si by ion beam synthesis
    Maeda, Y
    Terai, Y
    Itakura, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4B): : 2502 - 2505
  • [8] Low-temperature deposition of high quality β-FeSi2 films by co-sputtering of Fe and Si for β-FeSi2/Si heterojunction solar cell
    Hou, Guofu
    Yu, Cao
    Liu, Fang
    Sun, Jian
    Geng, Xinhua
    Zhao, Ying
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4, 2010, 7 (3-4): : 1081 - 1084
  • [9] ION-BEAM SYNTHESIS OF BURIED ALPHA-FESI2 AND BETA-FESI2 LAYERS
    RADERMACHER, K
    MANTL, S
    DIEKER, C
    LUTH, H
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (17) : 2145 - 2147
  • [10] STRUCTURAL CHARACTERIZATION OF EPITAXIAL ALPHA-DERIVED FESI2 ON SI(111)
    JEDRECY, N
    WALDHAUER, A
    SAUVAGESIMKIN, M
    PINCHAUX, R
    ZHENG, Y
    [J]. PHYSICAL REVIEW B, 1994, 49 (07): : 4725 - 4730
12345