ION-BEAM SYNTHESIS OF BURIED ALPHA-FESI2 AND BETA-FESI2 LAYERS

被引：82
|
作者：
RADERMACHER, K
MANTL, S
DIEKER, C
LUTH, H
机构：
[1] Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 17期
关键词：
D O I：
10.1063/1.106107
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Using high dose implantation of Fe+ into (111)Si, followed by rapid thermal annealing (RTA) at 1150-degrees-C for 10 s, we fabricated continuous buried layers of the metallic alpha-FeSi2 phase. Rutherford backscattering experiments indicate that these layers contain a large number of Fe vacancies, up to 18%. By implanting through a SiO2 mask, we produced Schottky diodes with idealty factors of 1.4 +/- 0.1 and a Schottky barrier height of (PHI-B = 0.84 +/- 0.03 eV on (111) n-Si. In this letter we report for the first time the formation of the semiconducting stoichiometric FeSi2 (beta-FeSi2) phase by annealing the buried alpha-FeSi2 layers below the phase transition temperature of 937-degrees-C; specifically at 750-degrees-C for 20 h.
引用
收藏
页码：2145 / 2147
页数：3
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