RADIATION-INDUCED INCREASE OF MOBILE SODIUM IN MOS CAPACITORS

被引：5
|
作者：
REPACE, JL
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1977年 / 24卷 / 06期
关键词：
D O I：
10.1109/TNS.1977.4329170
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2088 / 2092
页数：5
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