ELECTRICAL-PROPERTIES OF NUCLEAR DOPED EPITAXIAL LAYERS OF GALLIUM-ARSENIDE

被引：0
|
作者：
KARPOVICH, LM
KORSHUNOV, FP
SOLODOVNIKOV, ES
UTENKO, VI
FOTIN, AV
SHOKH, VF
机构：
来源：
DOKLADY AKADEMII NAUK BELARUSI | 1992年 / 36卷 / 11-12期
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D O I：
暂无
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Electrical characteristics (Hall effect, resistivity) of GaAs nuclear doped epitaxial layers (NDEL) were investigated. NDEL were compared with the epitaxial layers grown by Vapour Phase Epitaxy (EL VPE). NDEL. were more homogeneous than EL VPE with the same doping. Electron mobility in NDEL is equal to or exeeds the best EL VPE.
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页码：982 / 984
页数：3
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