AN IMPROVED SINGLE EVENT RESISTIVE-HARDENING TECHNIQUE FOR CMOS STATIC RAMS

被引：10
|
作者：
JOHNSON, RL
DIEHL, SE
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 06期
关键词：
D O I：
10.1109/TNS.1986.4334679
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1730 / 1733
页数：4
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