COMPARISON OF METAL-N-P+ AND P+-N-P+ BARITT SMALL-SIGNAL NOISE MEASURES

被引:3
|
作者
CHRISTIE, J [1 ]
STEWART, JAC [1 ]
机构
[1] QUEENS UNIV,DEPT ELECT & ELECTR ENGN,BELFAST BT7 1NN,NORTH IRELAND
关键词
D O I
10.1049/el:19730407
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:553 / 555
页数:3
相关论文
共 50 条
  • [41] COMPARISON OF PLASMA FORMATION IN N+P AND P+N TRAPATT DIODES
    LEE, CA
    FREY, J
    [J]. ELECTRONICS LETTERS, 1973, 9 (14) : 318 - 320
  • [42] Timing Performance Comparison of P-on-N and N-on-P Silicon Photomultipliers
    Vinke, Ruud
    Yeom, Jung Yeol
    Mazzillo, Massimo
    Sanfilippo, D.
    Piana, A.
    Levin, Craig S.
    [J]. 2012 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE RECORD (NSS/MIC), 2012, : 2128 - 2130
  • [43] Sequences of measures on atomic subalgebras of P (N)
    Aizpuru, Antonio
    Gutierrez-Davila, Antonio
    [J]. QUAESTIONES MATHEMATICAE, 2007, 30 (03) : 381 - 389
  • [44] Comparison of radiation hardness of P-in-N, N-in-N, and N-in-P silicon pad detectors
    Lozano, M
    Pellegrini, G
    Fleta, C
    Loderer, C
    Rafí, JM
    Ullán, M
    Campabadal, F
    Martínez, C
    Key, M
    Casse, G
    Allport, P
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2005, 52 (05) : 1468 - 1473
  • [45] An analytical small-signal bias-dependent nonuniform model for p-i-n traveling-wave photodetectors
    Torrese, G
    Huynen, I
    Serres, M
    Gallagher, D
    Banham, M
    Vander Vorst, A
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2002, 50 (11) : 2553 - 2557
  • [46] BISTABLE NOISE IN P-N JUNCTIONS
    HSU, ST
    [J]. SOLID-STATE ELECTRONICS, 1971, 14 (06) : 487 - +
  • [47] Hausdorff dimension and σ finiteness of p harmonic measures in space when p ≥ n
    Akman, Murat
    Lewis, John
    Vogel, Andrew
    [J]. NONLINEAR ANALYSIS-THEORY METHODS & APPLICATIONS, 2015, 129 : 198 - 216
  • [48] Radio-frequency small-signal model of hetero-gate-dielectric p-n-p-n tunneling field-effect transistor including charge conservation capacitance and substrate parameters
    Marjani, Saeid
    Hosseini, Seyed Ebrahim
    [J]. JOURNAL OF APPLIED PHYSICS, 2015, 118 (09)
  • [49] TEMPERATURE DEPENDENCE OF FLICKER NOISE OF P-N-P JUNCTION TRANSISTORS
    AMAKASU, K
    ASANO, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) : 1249 - 1249
  • [50] HIGH-INJECTION TRANSMISSION-LINE MODEL OF P-N DIODE AND P-N-P TRANSISTOR NOISE
    VANDERZIEL, A
    VANVLIET, KM
    [J]. SOLID-STATE ELECTRONICS, 1978, 21 (08) : 1023 - 1024