TRANSIENT FLUOROCARBON FILM THICKNESS EFFECTS NEAR THE SILICON DIOXIDE SILICON INTERFACE IN SELECTIVE SILICON DIOXIDE REACTIVE ION ETCHING

被引：31
|
作者：
JASO, MA
OEHRLEIN, GS
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 03期
关键词：
D O I：
10.1116/1.575712
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：1397 / 1401
页数：5
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