LIFETIME OF UNDERCOOLED WETTING LAYERS

被引:25
|
作者
BAUSCH, R
BLOSSEY, R
机构
[1] Institut für Theoretische Physik IV, Heinrich-Heine-Universität Düsseldorf, 40225 Düsseldorf
关键词
D O I
10.1103/PhysRevE.50.R1759
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
The recently observed large hysteresis effects in undercooling or overheating of wetting layers in systems with a prewetting transition are shown to be a simple consequence of the geometry of the phase diagram. In order to estimate quantitatively the lifetime of such metastable layers, one has to calculate the excess free energy E(c) of the corresponding critical nuclei. For the case of undercooling we determine E(c) as a function of chemical potential mu for a fixed temperature T well below the wetting transition point T-w. For overheating E(c) is known from previous calculations as a function of T at bulk coexistence mu = mu(c).
引用
收藏
页码:R1759 / R1761
页数:3
相关论文
共 50 条
  • [41] Entropy of H2O wetting layers
    Feibelman, PJ
    Alavi, A
    JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (38): : 14362 - 14367
  • [42] Wetting layers effect on InAs/GaAs quantum dots
    Sun, Chao
    Lu, Pengfei
    Yu, Zhongyuan
    Cao, Huawei
    Zhang, Lidong
    PHYSICA B-CONDENSED MATTER, 2012, 407 (22) : 4440 - 4445
  • [43] NUMERICAL STUDY OF A LANGEVIN MODEL FOR THE GROWTH OF WETTING LAYERS
    TORAL, R
    CHAKRABARTI, A
    PHYSICAL REVIEW B, 1991, 43 (04): : 3438 - 3442
  • [44] 2 SCALING REGIMES FOR COMPLETE WETTING BY CRITICAL LAYERS
    LIPOWSKY, R
    PHYSICAL REVIEW LETTERS, 1985, 55 (16) : 1699 - 1699
  • [45] Wetting of the Au(110) substrate: Homoepitaxial islands and layers
    Bilalbegovic, G
    PHYSICAL REVIEW B, 1996, 53 (03): : 1616 - 1621
  • [47] Wetting of the Au(110) substrate: Homoepitaxial islands and layers
    Bilalbegovic, G.
    Physical Review B: Condensed Matter, 53 (03):
  • [48] HYDRODYNAMIC INSTABILITY OF THE WETTING FILMS (BOUNDARY-LAYERS)
    SMORODIN, VE
    LANGMUIR, 1994, 10 (07) : 2419 - 2422
  • [49] Ge/Si interdiffusion in the GeSi dots and wetting layers
    Wan, J
    Luo, YH
    Jiang, ZM
    Jin, G
    Liu, JL
    Wang, KL
    Liao, XZ
    Zou, J
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (08) : 4290 - 4292
  • [50] MONTE-CARLO SIMULATION OF THE GROWTH OF WETTING LAYERS
    MON, KK
    BINDER, K
    LANDAU, DP
    PHYSICAL REVIEW B, 1987, 35 (07): : 3683 - 3685