OPTIMIZATION OF IMPLANTATION CONDITIONS FOR THE FORMATION OF BURIED SIO2 LAYERS IN SILICON

被引：1
|
作者：
MOSSADEQ, H [1 ]
BENNETT, RJ [1 ]
ANAND, KV [1 ]
机构：
[1] FAIRCHILD CAMERA & INSTRUMENT CORP,TECHNOL GRP,PALO ALTO,CA 94304
来源：
ELECTRONICS LETTERS | 1982年 / 18卷 / 05期
关键词：
D O I：
10.1049/el:19820147
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：215 / 216
页数：2
相关论文
共 50 条
  • [11] A STUDY OF 2 MEV OXYGEN IMPLANTATION TO FORM DEEPLY BURIED SIO2 LAYERS
    GROB, JJ
    GROB, A
    THEVENIN, P
    SIFFERT, P
    DANTERROCHES, C
    GOLANSKI, A
    JOURNAL OF MATERIALS RESEARCH, 1989, 4 (05) : 1227 - 1232
  • [12] FORMATION OF ABRUPT INTERFACES BETWEEN SURFACE SILICON AND BURIED SIO2 LAYERS BY VERY HIGH-DOSE OXYGEN-ION IMPLANTATION
    HAYASHI, T
    OKAMOTO, H
    HOMMA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : 1005 - 1006
  • [13] ION-BEAM SYNTHESIS OF THIN BURIED LAYERS OF SIO2 IN SILICON
    HEMMENT, PLF
    REESON, KJ
    KILNER, JA
    CHATER, RJ
    MARSH, C
    BOOKER, GR
    CELLER, GK
    STOEMENOS, J
    VACUUM, 1986, 36 (11-12) : 877 - 881
  • [14] THE EVOLUTION OF THE SI/SIO2 INTERFACE IN BURIED OXIDE LAYERS FORMED BY HIGH-DOSE OXYGEN IMPLANTATION INTO SILICON
    CHATER, RJ
    KILNER, JA
    HEMMENT, PLF
    REESON, KJ
    DAVIS, JR
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 290 - 293
  • [15] IMPLANTED OXIDE LAYERS IN SILICON - ESTABLISHMENT OF A CRITICAL DOSE FOR DIRECT FORMATION OF A STOICHIOMETRIC BURIED SIO2 LAYER
    YANKOV, RA
    WILSON, IH
    CHAKAROV, IR
    VACUUM, 1989, 39 (11-12) : 1167 - 1170
  • [16] Formation of buried insulating island-like SiO2 layer in silicon
    Frantskevich, AV
    Fedotov, AK
    Frantskevich, NV
    Mazanik, AV
    Rau, EI
    Kulinkayskas, VS
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 124 : 341 - 344
  • [17] Mechanism of Si island retention in buried SiO2 layers formed by oxygen ion implantation
    Afanas'ev, VV
    Stesmans, A
    Revesz, AG
    Hughes, HL
    APPLIED PHYSICS LETTERS, 1997, 71 (15) : 2106 - 2108
  • [18] Mechanism for Si island retention in buried SiO2 layers formed by oxygen ion implantation
    Afanas'ev, V.V.
    Stesmans, A.
    Revesz, A.G.
    Hughes, H.L.
    Applied Physics Letters, 1997, 71 (15):
  • [19] SIO2 BURIED LAYER FORMATION BY SUBCRITICAL DOSE OXYGEN ION-IMPLANTATION
    STOEMENOS, J
    MARGAIL, J
    JAUSSAUD, C
    DUPUY, M
    BRUEL, M
    APPLIED PHYSICS LETTERS, 1986, 48 (21) : 1470 - 1472
  • [20] Buried ZnTe nanocrystallites in thermal SiO2 on silicon synthesized by high dose ion implantation
    Karl, H
    Grosshans, I
    Attenberger, W
    Schmid, M
    Stritzker, B
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 178 : 126 - 130
12345