OPTIMIZATION OF IMPLANTATION CONDITIONS FOR THE FORMATION OF BURIED SIO2 LAYERS IN SILICON

被引：1
|
作者：
MOSSADEQ, H [1 ]
BENNETT, RJ [1 ]
ANAND, KV [1 ]
机构：
[1] FAIRCHILD CAMERA & INSTRUMENT CORP,TECHNOL GRP,PALO ALTO,CA 94304
来源：
ELECTRONICS LETTERS | 1982年 / 18卷 / 05期
关键词：
D O I：
10.1049/el:19820147
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：215 / 216
页数：2
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