INTERFACIAL LAYER FORMATION IN THE SPUTTER-DEPOSITED SIO2-GAAS SYSTEM

被引：1
|
作者：
TORIKAI, T
ENDO, K
机构：
来源：
APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 09期
关键词：
D O I：
10.1063/1.92065
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：835 / 837
页数：3
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