PALLADIUM-SILICIDE SCHOTTKY-BARRIER IR-CCD FOR SWIR APPLICATIONS AT INTERMEDIATE TEMPERATURES

被引：26
|
作者：
ELABD, H
VILLANI, T
KOSONOCKY, W
机构：
来源：
ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 04期
关键词：
D O I：
10.1109/EDL.1982.25490
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：89 / 90
页数：2
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