Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN/GaN High Electron Mobility Transistor

被引：0
|
作者：
Rogachev, I. A. [1 ]
Knyazkov, A. V. [1 ]
Meshkov, O. I. [1 ]
Kurochka, A. S. [1 ]
机构：
[1] JSC RPC Istok, 2A Vokzalnaya St, Fryazino 141190, Moscow Region, Russia
来源：
JOURNAL OF NANO- AND ELECTRONIC PHYSICS | 2016年 / 8卷 / 02期
关键词：
Gallium nitride; Ohmic contacts; Encapsulation; Gate AlGaN / GaN HEMT;
D O I：
10.21272/jnep.8(2).02044
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Reported about study of processes of formation of Ti / Al / Ni / Au ohmic contacts to heterostructures AlGaN / GaN and gate Ni / Au. Investigated of process recess the semiconductor layer for minimum resistance of ohmic contact - 0.4 Ohm center dot mm. Studied influence of encapsulation ohmic contacts on their surface morphology.
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页数：3
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