ELECTRON MOBILITY AND SHALLOW IMPURITY LEVELS IN IN-DOPED AND CU-DOPED CDS

被引：2
|
作者：
LI, SS
HUANG, CI
机构：
来源：
PHYSICAL REVIEW B | 1971年 / 3卷 / 10期
关键词：
D O I：
10.1103/PhysRevB.3.3266
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
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页码：3266 / &
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