ARSENIC DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY

被引：39
|
作者：
SHIBLI, SM
TAMARGO, MC
SKROMME, BJ
SCHWARZ, SA
SCHWARTZ, CL
NAHORY, RE
MARTIN, RJ
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期
关键词：
D O I：
10.1116/1.584851
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：187 / 191
页数：5
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