THIN SILICON EPITAXIAL LAYER DEPOSITION WITH REDUCED PRESSURE RTP-CVD

被引：3
|
作者：
WONG, F
CHEN, CY
KU, YH
机构：
来源：
RAPID THERMAL ANNEALING / CHEMICAL VAPOR DEPOSITION AND INTEGRATED PROCESSING | 1989年 / 146卷
关键词：
D O I：
10.1557/PROC-146-27
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：27 / 33
页数：7
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