DEGENERATE DOPING AND CONDUCTION-BAND PROPERTIES OF SI STUDIED BY SYNCHROTRON PHOTOEMISSION OF SB/SI(001)

被引：13
|
作者：
RICH, DH [1 ]
SAMSAVAR, A [1 ]
MILLER, T [1 ]
LEIBSLE, FM [1 ]
CHIANG, TC [1 ]
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源：
PHYSICAL REVIEW B | 1989年 / 40卷 / 05期
关键词：
D O I：
10.1103/PhysRevB.40.3469
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：3469 / 3472
页数：4
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