THE SUB-THRESHOLD CHARACTERISTICS OF POLYSILICON THIN-FILM-TRANSISTORS

被引：14
|
作者：
FORTUNATO, G [1 ]
MEAKIN, DB [1 ]
MIGLIORATO, P [1 ]
机构：
[1] GEC RES LTD,HIRST RES CTR,WEMBLEY HA9 7PP,MIDDX,ENGLAND
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 11期
关键词：
D O I：
10.1143/JJAP.27.2124
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2124 / 2127
页数：4
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