SCHOTTKY BARRIERS AT THE INTERFACE BETWEEN AMORPHOUS SILICON AND ELECTROLYTES

被引：27

|

作者：

WILLIAMS, R

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 04期

关键词：

D O I：

10.1063/1.326198

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2848 / 2851

页数：4

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