SCHOTTKY BARRIERS AT THE INTERFACE BETWEEN AMORPHOUS SILICON AND ELECTROLYTES

被引：27
|
作者：
WILLIAMS, R
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 04期
关键词：
D O I：
10.1063/1.326198
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2848 / 2851
页数：4
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