ETCHING OF SI THROUGH SIO2 IN CF4/N2O PLASMA

被引：0
|
作者：
WANG, XW
LIU, MD
MA, TP
BARKER, RC
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 02期
关键词：
D O I：
10.1149/1.2095634
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：442 / 445
页数：4
相关论文
共 50 条
  • [41] PLASMA-ETCHING OF NIOBIUM WITH CF4/O2 GASES
    CHEN, MM
    WANG, RH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 708 - 711
  • [42] Comparison of models for silicon etching in CF4 + O2 plasma
    Knizikevicius, R.
    VACUUM, 2012, 86 (12) : 1964 - 1968
  • [43] Redeposition of etch products on sidewalls during SiO2 etching in a fluorocarbon plasma.: III.: Effects of O2 addition to CF4 plasma
    Min, JH
    Hwang, SW
    Lee, GR
    Moon, SH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (04): : 1210 - 1215
  • [44] Specific Features of the Kinetics of the Reactive-Ion Etching of Si and SiO2 in a CF4 + O2 Mixture in a Low Power Supply Mode
    Efremov A.M.
    Betelin V.B.
    Kwon K.-H.
    Russian Microelectronics, 2021, 50 (05) : 303 - 310
  • [45] Optical diagnostics for plasma-surface interaction in CF4/Ar radio-frequency inductively coupled plasma during Si and SiO2 etching
    Miyoshi, Y.
    Miyauchi, M.
    Oguni, A.
    Makabe, T.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (05): : 1718 - 1724
  • [46] NEGATIVE AND POSITIVE-IONS FROM CF4 AND CF4/O2 RF DISCHARGES IN ETCHING SI
    LIN, Y
    OVERZET, LJ
    APPLIED PHYSICS LETTERS, 1993, 62 (07) : 675 - 677
  • [47] Functional design of a pulsed two-frequency capacitively coupled plasma in CF4/Ar for SiO2 etching
    Maeshige, K
    Washio, G
    Yagisawa, T
    Makabe, T
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (12) : 9494 - 9501
  • [48] PROBLEMS OF SURFACE-MORPHOLOGY AND LAYER DEPOSITION DURING PLASMA-ETCHING PROCESSES .2. SI-ETCHING IN CF4-, CF4/O2- AND CF4/H2 PLASMAS
    TILLER, HJ
    KRAUSSE, J
    VOIGT, R
    CRYSTAL RESEARCH AND TECHNOLOGY, 1982, 17 (07) : 821 - 825
  • [49] MODELING OF SILICON ETCHING IN CF4/O2 AND CF4/H2 PLASMAS
    VENKATESAN, SP
    TRACHTENBERG, I
    EDGAR, TF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (07) : 2280 - 2290
  • [50] SELECTIVE ETCHING OF SIO2 WITH A CF-H2 PLASMA
    MAUER, JL
    CARRUTHERS, RA
    JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 727 - 727
12345