ELECTRIC FIELD-POTENTIAL CORRELATION FACTORS FOR FIELD-EMISSION MICROTRIODES

被引:25
|
作者
NICOLAESCU, D
机构
[1] Research Inst for Electronic, Components (ICCE), Bucharest
来源
关键词
D O I
10.1116/1.588348
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The field emission microtriode (FEMT) correlation factors β and γ between the electric field E on the emitter and the gate Vg and anode Va potentials have been numerically studied. It was found that E is linear with Vg and Va for every emitter point, as long as the Laplace equation can be applied for potential. Two FEMT scaling effects were stated. The FEMT model used has parallel cathode, gate and anode planes, the gate having near the emitter a 'volcano' shape. The emitter has a conical shape with spherical tip, protruding through the gate circular opening. A set of linear relationships for β and γ was derived. It was found that the γ correlation factor and the transconductance gm can be increased with orders of magnitude in this FEMT collector-assisted mode of operation. Comparison with experimental results is provided.
引用
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页码:531 / 535
页数:5
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