DETERMINATION OF DIFFERENT ORIENTATIONS IN EPITAXIAL SILICIDE LAYERS USING X-RAY-DIFFRACTION

被引：2

作者：

VANDERSTRAETEN, H ^{[1
]}

BRUYNSERAEDE, Y ^{[1
]}

WU, MF ^{[1
]}

VANTOMME, A ^{[1
]}

LANGOUCHE, G ^{[1
]}

机构：

[1] KATHOLIEKE UNIV LEUVEN,INST KERN STRALINGSFYS,B-3001 LOUVAIN,BELGIUM

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1991年 / 24卷 / 06期

关键词：

D O I：

10.1088/0022-3727/24/6/019

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heteroepitaxial CoSi2 layers have been formed by high-dose ion beam synthesis and solid phase epitaxy on Si<111> substrates. X-ray rocking curve measurements allow a very precise determination of the relative amounts of aligned (type A) and twinned (type B) CoSi2. A simple procedure yields the separation of the asymmetric reflections of the (331) planes of type A or type B Si and CoSi2. The intensity ratio of the (331) reflection of type A and type B CoSi2 corresponds to the relative amounts of type A and type B CoSi2.

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页码：937 / 941

页数：5

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