NUMERICAL MODELING OF A MICROMACHINED THERMAL-CONDUCTIVITY GAS-PRESSURE SENSOR

被引:23
|
作者
ALLEGRETTO, W
SHEN, B
HASWELL, P
LAI, ZS
ROBINSON, AM
机构
[1] UNIV ALBERTA,CTR MICROELECTR,EDMONTON T6G 2G7,AB,CANADA
[2] UNIV ALBERTA,DEPT ELECT ENGN,EDMONTON T6G 2G7,AB,CANADA
[3] E CHINA NORMAL UNIV,DEPT ELECTR,SHANGHAI,PEOPLES R CHINA
基金
加拿大自然科学与工程研究理事会;
关键词
D O I
10.1109/43.317468
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
We have developed a software package that simulates the operation of a silicon micromachined CMOS thermal conductivity gas pressure gauge. The performance of actual devices was compared against the simulated operation and was found to be in good agreement. The 3-dimensional simulation was reduced to two 2-dimensional simulations to reduce complexity. The two equations resulting from steady state energy balance considerations were discretized and an iterative nonlinear Gauss-Seidel procedure applied to solve the system of equations. Temperature profiles and contours were calculated and the effect of geometric and materials modifications was demonstrated.
引用
收藏
页码:1247 / 1256
页数:10
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