VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF GA1-YINYAS1-XPX QUATERNARY ALLOYS

被引：37
|
作者：
SUGIYAMA, K [1 ]
KOJIMA, H [1 ]
ENDA, H [1 ]
SHIBATA, M [1 ]
机构：
[1] NIPPON TELEG & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷 / 12期
关键词：
D O I：
10.1143/JJAP.16.2197
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2197 / 2203
页数：7
相关论文
共 50 条
  • [41] SELECTIVE EPITAXIAL-GROWTH OF IN1-XALXAS BY METAL-ORGANIC VAPOR-PHASE EPITAXY
    SHIMOYAMA, K
    INOUE, Y
    FUJII, K
    GOTOH, H
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 17 (1-3): : 29 - 33
  • [42] SILICON VAPOR-PHASE EPITAXIAL-GROWTH CATALYSIS BY THE PRESENCE OF GERMANE
    GARONE, PM
    STURM, JC
    SCHWARTZ, PV
    SCHWARZ, SA
    WILKENS, BJ
    APPLIED PHYSICS LETTERS, 1990, 56 (13) : 1275 - 1277
  • [43] LOCAL EPITAXIAL-GROWTH OF DIAMOND ON NICKEL FROM THE VAPOR-PHASE
    SATO, Y
    FUJITA, H
    ANDO, T
    TANAKA, T
    KAMO, M
    PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1993, 342 (1664): : 225 - 231
  • [44] VAPOR-PHASE EPITAXIAL-GROWTH OF INGAAS ON (100) INP SUBSTRATE
    SUSA, N
    YAMAUCHI, Y
    ANDO, H
    KANBE, H
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) : L17 - L20
  • [45] PHYSICS AND TECHNOLOGY OF VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS - A REVIEW
    JAIN, BP
    PUROHIT, RK
    PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1984, 9 (1-2): : 51 - 103
  • [46] VAPOR-PHASE EPITAXIAL-GROWTH OF ALAS BY CHLORIDE TRANSPORT METHOD
    HASEGAWA, F
    YAMAMOTO, T
    KATAYAMA, K
    NANNICHI, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (06) : 1548 - 1553
  • [47] VAPOR-PHASE EPITAXIAL-GROWTH ZNSE EPILAYER ON GAAS SUBSTRATE
    SU, YK
    WEI, CC
    CHANG, CC
    WU, JD
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C480 - C481
  • [48] ELUCIDATION OF THE ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH MECHANISM FOR INP
    BUCHAN, NI
    LARSEN, CA
    STRINGFELLOW, GB
    APPLIED PHYSICS LETTERS, 1987, 51 (13) : 1024 - 1026
  • [49] VAPOR-PHASE EPITAXIAL-GROWTH AND DEFECTS OF GALLIUM-PHOSPHIDE
    OGIRIMA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (03) : 281 - &
  • [50] VAPOR-PHASE EPITAXIAL-GROWTH OF SN-DOPED GAAS
    SANKARAN, R
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (05) : 797 - 799
12345