Ohmic Contact Effect and Electrical Characteristics of ITO Thin Film Depending on SiOC Insulator

被引：0
|
作者：
Oh, Teresa [1 ]
机构：
[1] Cheongju Univ, Dept Semicond Engn, Cheongju, South Korea
来源：
KOREAN JOURNAL OF MATERIALS RESEARCH | 2015年 / 25卷 / 07期
关键词：
SiOC; ITO; schottky contact; ohmic contact; PL spectra;
D O I：
10.3740/MRSK.2015.25.7.352
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
To research the characteristics of ITO film depending on a polarity of SiOC, specimens of ITO/SiOC/glass with metal-insulator-substrates (MIS) were prepared using a sputtering system. SiOC film with 17 sccm of oxygen flow rate became a non-polarity with low surface energy. The PL spectra of the ITO films deposited with various argon flow rates on SiOC film as non-polarity were found to lead to similar formations. However, the PL spectra of ITO deposited with various argon flow rates on SiOC with polarity were seen to have various features owing to the chemical reaction between ITO and the polar sites of SiOC. Most ITO/SiOC films non-linearly showed the Schottky contacts and current increased. But the ITO/SiOC film with a low current demonstrated an Ohmic contact.
引用
收藏
页码：352 / 357
页数：6
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