LOW RESISTIVITY INDIUM TIN OXIDE TRANSPARENT CONDUCTIVE FILMS .1. EFFECT OF INTRODUCING H2O GAS OF H2 GAS DURING DIRECT-CURRENT MAGNETRON SPUTTERING

被引：152

作者：

ISHIBASHI, S

HIGUCHI, Y

OTA, Y

NAKAMURA, K

机构：

[1] Institute for Super Materials, ULVACJAPAN, Ltd, 289-12

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 03期

关键词：

D O I：

10.1116/1.576889

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

When an inline sputtering system is used to make conductive transparent ITO film by the direct current (dc) magnetron sputtering method, it was found that the partial gas pressure of H2G affected the properties of deposited films. When the substrate temperature is at or below 200 °C, the control of H>G partial gas pressure is especially important. Using room temperature substrates, an addition of 2X 10 −5 Torr of H20 in the sputtering process could form ITO films with good repeatability at a low resistivity of 6.0 × 10 - 4 11 cm. By adding 11, 0 gas, it was possible to solve the issue of increased resistivity in thicker films. The films with added H20 gas have H element immersed into the film and have high carrier concentration. Film transmittance stayed constant with or without H2G gas addition. Similar effect was observed by adding H2 gas instead of H20 gas. © 1990, American Vacuum Society. All rights reserved.

引用

页码：1399 / 1402

页数：4

共 50 条

[31] TIN (IV) ARSENATES .1. PREPARATION OF CRYSTALLINE COMPOUNDS - STUDY OF CATION EXCHANGING HYDROGENOARSENATES H2[SN(ASO4)2].H2O AND H2[SN(ASO4)2].0.5 H2O
DEMARET, A
DYVOIRE, F
GUERIN, H
BULLETIN DE LA SOCIETE CHIMIQUE DE FRANCE PARTIE I-PHYSICOCHIMIE DES SYSTEMES LIQUIDES ELECTROCHIMIE CATALYSE GENIE CHIMIQUE, 1974, (11): : 2335 - 2339
[32] ELIMINATION OF THE WATER GAS SHIFT REACTION BY DIRECT PROCESSING OF CO/H2/H2O OVER NI/SIO2 CATALYSTS
KUIJPERS, EGM
TJEPKEMA, RB
GEUS, JW
JOURNAL OF MOLECULAR CATALYSIS, 1984, 25 (1-3): : 241 - 251
[33] Determination of CO, H2O and H2 coverage by XANES and EXAFS on Pt and Au during water gas shift reaction
Guo, Neng
Fingland, Bradley R.
Williams, W. Damion
Kispersky, Vincent F.
Jelic, Jelena
Delgass, W. Nicholas
Ribeiro, Fabio H.
Meyer, Randall J.
Miller, Jeffrey T.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2010, 12 (21) : 5678 - 5693
[34] Transparent conductive Mg and Ga co-doped ZnO thin films for solar cells grown by magnetron sputtering: H2 induced changes
Tian, Cong-sheng
Chen, Xin-liang
Ni, Jian
Liu, Jie-ming
Zhang, De-Kun
Huang, Qian
Zhao, Ying
Zhang, Xiao-dan
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2014, 125 : 59 - 65
[35] Influence of plasma gas (SPRAL22, Ar/H2) and impurities (O2, H2O) on the electrode lifetime during spraying
Gourlaouen, V
Remy, F
Leger, JM
Sattonnet, J
THERMAL SPRAY, VOLS 1 AND 2: MEETING THE CHALLENGES OF THE 21ST CENTURY, 1998, : 797 - 801
[36] A novel gas sensor design based on CH4/H2/H2O plasma etched ZnO thin films
Gruber, D
Kraus, F
Müller, J
SENSORS AND ACTUATORS B-CHEMICAL, 2003, 92 (1-2) : 81 - 89
[37] Effect of low H2 concentrations on the current-voltage characteristic of ZnO gas sensor
Al-Hardan, N. H.
Abdullah, M. J.
Aziz, A. Abdul
ADVANCES IN APPLIED CERAMICS, 2010, 109 (07) : 436 - 439
[38] Low resistivity Ru1-xTixO2 thin films deposited by hybrid high-power impulse magnetron sputtering and direct current magnetron sputtering technique
Sandu, C. S.
Magrez, A.
Karimi, A.
Sanjines, R.
THIN SOLID FILMS, 2019, 676 : 54 - 59
[39] Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells
Alves, Marina
Brito, Daniel
Carneiro, Joaquim
Teixeira, Vasco
Sadewasser, Sascha
THIN SOLID FILMS, 2023, 774
[40] Gas-phase diagnostics during H2 and H2O plasma treatment of SnO2 nanomaterials: Implications for surface modification
Stuckert, Erin P.
Miller, Christopher J.
Fisher, Ellen R.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2017, 35 (02):

← 1 2 3 4 5 →