BAND OFFSETS FOR THE SILICON-NITRIDE AMORPHOUS-SILICON INTERFACE - IMPLICATIONS FOR CHARGE TRANSPORT AND TRAPPING IN SILICON-NITRIDE

被引：9
|
作者：
JACKSON, WB
MOYER, MD
TSAI, CC
MARSHALL, J
机构：
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷
关键词：
D O I：
10.1016/0022-3093(87)90214-6
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：891 / 894
页数：4
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