FABRICATION OF SELF-ALIGNED ALUMINUM GATE POLYSILICON THIN-FILM TRANSISTORS USING LOW-TEMPERATURE CRYSTALLIZATION PROCESS

被引：6

作者：

OHNO, E

YOSHINOUCHI, A

HOSODA, T

ITOH, M

MORITA, T

TSUCHIMOTO, S

机构：

[1] Central Research Laboratories, Sharp Corporation, Tenri, Nara, 632

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 1B期

关键词：

POLYSILICON; THIN-FILM TRANSISTOR; ALUMINUM; LOW-TEMPERATURE PROCESS; LIQUID CRYSTAL DISPLAY; ION DOPING;

D O I：

10.1143/JJAP.33.635

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The performance of scanning driver circuits fabricated with self-aligned aluminum gate polysilicon thin-film transistors (TFT's) is demonstrated. After the gate electrode patterning, the fabrication process temperature is kept below 400 degrees C to enable the use of aluminum gate electrodes. The low-temperature crystallization phenomenon, which occurs when protons are implanted simultaneously with boron or phosphorus dopants, is employed to eliminate the 600 degrees C activation-annealing process. A maximum clock frequency of about 2.0 MHz is achieved when the driver operating voltage is 24 V and the TFT channel length is 12 mu m.

引用

页码：635 / 638

页数：4

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