FIELD-EFFECT TUNABLE QUANTUM DOTS ON SILICON

被引：3
|
作者：
ALSMEIER, J
BATKE, E
KOTTHAUS, JP
机构：
[1] Institut für Angewandte Physik, Universität Hamburg, D-2000 Hamburg 36
来源：
SURFACE SCIENCE | 1990年 / 229卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(90)90891-B
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A versatile dual gate structure on silicon is presented in which a periodic array of electron disks with diameters in the 100 nm range can be induced by field effect. With far infrared spectroscopy at low temperatures we demonstrate that the disks containing 20 to 350 electrons can be tuned from quasi-two-dimensional behavior to quantum dot behavior by electric and magnetic fields. © 1990.
引用
收藏
页码：287 / 289
页数：3
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