CHARACTERIZATION OF SEMICONDUCTING DIAMOND FILM AND ITS APPLICATION TO ELECTRONIC DEVICES

被引：11
|
作者：
OKANO, K
IWASAKI, T
KIYOTA, H
KUROSU, T
IIDA, M
机构：
[1] Department of Electronics, School of Engineering, Tokai University, Hiratsuka, Kanagawa, 259-12
来源：
THIN SOLID FILMS | 1991年 / 206卷 / 1-2期
关键词：
D O I：
10.1016/0040-6090(91)90418-W
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A diamond p-n junction diode has been fabricated by the chemical vapour deposition technique. Diphosphorus pentaoxide and boron trioxide were used for the doping sources for the n- and p-type diamond films respectively. The films were identified as diamond from the results of the electron diffraction and Raman spectroscopy. The diode exhibited distinct rectification characteristics. The formation of the depletion layer was confirmed from the result of the electron-beam-induced current measurement.
引用
收藏
页码：183 / 187
页数：5
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