LASER ANNEALING OF DIFFUSION-INDUCED IMPERFECTIONS IN SILICON

被引：29

|

作者：

YOUNG, RT

NARAYAN, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 01期

关键词：

D O I：

10.1063/1.90164

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：14 / 16

页数：3

相关论文

共 50 条

[1] DIFFUSION-INDUCED IMPERFECTIONS IN SILICON
JOSHI, ML
WILHELM, F
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (2P1) : 185 - &
[2] EFFECT OF FAST COOLING ON DIFFUSION-INDUCED IMPERFECTIONS IN SILICON
JOSHI, ML
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (09) : 912 - &
[3] DIFFUSION-INDUCED DISLOCATIONS IN SILICON
WASHBURN, J
THOMAS, G
JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1909 - &
[4] RETARDATION OF DIFFUSION BY DIFFUSION-INDUCED DISLOCATION IN SILICON
YOSHIDA, M
KANAMORI, S
JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (03) : 338 - &
[5] APPLICATION OF BERG-BARRETT SKEW REFLECTIONS FOR OBSERVING BORON DIFFUSION-INDUCED IMPERFECTIONS IN SILICON WAFERS
JULEFF, EM
LAPIERRE, AG
INTERNATIONAL JOURNAL OF ELECTRONICS, 1966, 20 (03) : 273 - &
[6] EFFECT OF DIFFUSION-INDUCED DISLOCATIONS ON ANTIMONY DIFFUSION INTO SILICON
SONG, SH
NIIMI, T
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 145 - 149
[7] IMPERFECTIONS IN SILICON INDUCED BY DIFFUSION OF IMPURITIES
INO, H
KAWAMURA, T
YASUFUKU, M
JAPANESE JOURNAL OF APPLIED PHYSICS, 1964, 3 (11) : 692 - &
[8] EFFECT OF DIFFUSION-INDUCED STRAIN ON PHOSPHORUS DIFFUSION INTO SILICON
MATSUMOTO, S
NIIMI, T
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : C309 - C309
[9] DIFFUSION-INDUCED DEFECTS IN SILICON .2.
LEVINE, E
WASHBURN, J
THOMAS, G
JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) : 87 - &
[10] EFFECTS OF DIFFUSION-INDUCED STRAIN AND DISLOCATION ON PHOSPHORUS DIFFUSION INTO SILICON
MATSUMOTO, S
AKAO, Y
KOHIYAMA, K
NIIMI, T
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (11) : 1840 - 1845

← 1 2 3 4 5 →