CHARACTERIZATION OF LPCVD AND PECVD SILICON OXYNITRIDE FILMS

被引：20
|
作者：
HABRAKEN, FHPM
机构：
来源：
APPLIED SURFACE SCIENCE | 1987年 / 30卷 / 1-4期
关键词：
D O I：
10.1016/0169-4332(87)90092-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：186 / 196
页数：11
相关论文
共 50 条
  • [1] CHARACTERIZATION OF PECVD DEPOSITED SILICON OXYNITRIDE THIN-FILMS
    SPEAKMAN, SP
    READ, PM
    KIERMASZ, A
    [J]. VACUUM, 1988, 38 (03) : 183 - 188
  • [2] Capacitance-voltage characterization of LPCVD-silicon oxynitride films
    Szekeres, A
    Alexandrova, S
    Modreanu, M
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2001, 187 (02): : 493 - 498
  • [3] OXIDATION BEHAVIOR OF LPCVD SILICON OXYNITRIDE FILMS
    KUIPER, AET
    WILLEMSEN, MFC
    BAX, JMG
    HABRAKEN, FHPH
    [J]. APPLIED SURFACE SCIENCE, 1988, 33-4 : 757 - 764
  • [4] PROPERTIES OF THIN LPCVD SILICON OXYNITRIDE FILMS
    PAN, P
    ABERNATHEY, J
    SCHAEFER, C
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (05) : 617 - 632
  • [5] HEXACHLORODISILANE AS A PRECURSOR IN THE LPCVD OF SILICON DIOXIDE AND SILICON OXYNITRIDE FILMS
    TAYLOR, RC
    SCOTT, BA
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (08) : 2382 - 2386
  • [6] Optical and electrical properties of LPCVD silicon oxynitride films on silicon
    Szekeres, A
    Alexandrova, S
    Modreanu, M
    Cosmin, P
    Gartner, M
    [J]. VACUUM, 2001, 61 (2-4) : 205 - 209
  • [7] LPCVD-silicon oxynitride films: interface properties
    Halova, E
    Alexandrova, S
    Szekeres, A
    Modreanu, M
    [J]. MICROELECTRONICS RELIABILITY, 2005, 45 (5-6) : 982 - 985
  • [8] Characterisation of LPCVD silicon oxynitride films by optical spectroscopy
    Bercu, M
    Cobianu, C
    Modreanu, M
    Bercu, BN
    [J]. JOURNAL DE PHYSIQUE IV, 2001, 11 (PR3): : 963 - 969
  • [9] Structural analysis of silicon oxynitride films deposited by PECVD
    Criado, D
    Alayo, MI
    Pereyra, I
    Fantini, MCA
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 112 (2-3): : 123 - 127
  • [10] Characteristic Study of Silicon Nitride Films Deposited by LPCVD and PECVD
    Chris Yang
    John Pham
    [J]. Silicon, 2018, 10 : 2561 - 2567
12345