STRAIN RELAXATION IN HEXAGONALLY CLOSE-PACKED METAL-METAL INTERFACES

被引：200
|
作者：
GUNTHER, C
VRIJMOETH, J
HWANG, RQ
BEHM, RJ
机构：
[1] Abteilung Oberflächenchemie und Katalyse, Universität Ulm
[2] Department of Applied Physics, University of Groningen, NL-9747 AG Groningen
[3] Sandia National Laboratory, Livermore
来源：
PHYSICAL REVIEW LETTERS | 1995年 / 74卷 / 05期
关键词：
D O I：
10.1103/PhysRevLett.74.754
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Scanning tunneling microscopy observations on epitaxial Cu/Ru(0001) show the relaxation of (tensile) lattice strain to occur in four different stages with increasing film thickness, from pseudomorphic to unilaterally contracted to (quasi-)isotropically contracted film structures, with decreasing lattice strain and increasing interface energy. The underlying film layers rearrange during growth. Comparison with other data suggests this scheme to be more generally valid for tensile and, with slight modifications, also compressive strain relaxation in hexagonally close-packed metal surfaces and metal-metal interfaces. © 1995 The American Physical Society.
引用
收藏
页码：754 / 757
页数：4
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