HEATING OF CARRIERS IN GERMANIUM BY INFRARED RADIATION

被引：0

作者：

ZUDEEV, OG

IVANCHENKO, VA

NAUMENKO, GY

NIKOLAEV, MV

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1988年 / 22卷 / 05期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：593 / 594

页数：2

共 50 条

[21] OPTICAL STUDIES OF INJECTED CARRIERS .1. INFRARED ABSORPTION IN GERMANIUM
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[22] HEATING OF CARRIERS IN P-TYPE GERMANIUM BY A WEAK ELECTRIC-FIELD
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[24] THE FREQUENCY RESPONSE OF GERMANIUM DIODE MODULATORS TO INFRARED RADIATION
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[25] AN INVESTIGATION OF INDUCED ABSORPTION OF INFRARED RADIATION IN GERMANIUM DIODES
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[28] INTERACTION OF 10.6 MU-M RADIATION WITH CURRENT CARRIERS IN GERMANIUM
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[29] HEATING OF TISSUES BY NEAR AND FAR INFRARED RADIATION
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[30] Interaction of infrared radiation with free carriers in mesoporous silicon
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