INFLUENCE OF Cu-, Sn-, AND In-DOPING ON OPTICAL PROPERTIES OF AgGaGe3Se8 SINGLE CRYSTALS

被引：1

作者：

Krymus, A. S. ^{[1
]}

Myronchuk, G. L. ^{[1
]}

Parasyuk, O. V. ^{[1
]}

机构：

[1] Lesya Ukrainka Eastern European Natl Univ, 13 Volya Ave, UA-43025 Lutsk, Ukraine

来源：

UKRAINIAN JOURNAL OF PHYSICS | 2016年 / 61卷 / 07期

关键词：

chalcogenide crystals; optical properties; Urbach energy;

D O I：

10.15407/ujpe61.07.0606

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The optical properties of AgGaGe3Se8 single crystals doped with Cu, In, and Sn atoms have been studied. A physical model is proposed for those compounds, which are wide-gap semiconductors (Eg approximate to 2.09-2.15 eV at T = 300 K) with the p-type conductivity, and whose optical parameters depend on the dopant nature and concentration. On the basis of this model and making allowance for specific features of disordered systems, the obtained experimental results are explained.

引用

页码：606 / 612

页数：7

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