EFFECTS OF CONTACT PRESSURE ON METAL-SEMICONDUCTOR CONTACTS

被引：0

|

作者：

MAHMOUD, AA

机构：

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1968年 / 13卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：170 / +

页数：1

相关论文

共 50 条

[41] NATURE OF AN OHMIC METAL-SEMICONDUCTOR CONTACT
KROGER, FA
DIEMER, G
KLASENS, HA
PHYSICAL REVIEW, 1956, 103 (02): : 279 - 279
[42] Effect of realistic metal electronic structure on the lower limit of contact resistivity of epitaxial metal-semiconductor contacts
Hegde, Ganesh
Bowen, R. Chris
APPLIED PHYSICS LETTERS, 2014, 105 (05)
[43] Properties of Mott Contacts with an Ultralow Metal-Semiconductor Barrier
Shashkin, V. I.
Murel', A. V.
PHYSICS OF THE SOLID STATE, 2008, 50 (10) : 1964 - 1969
[44] COMMENTS ON BARRIER CHANGES IN STRESSED METAL-SEMICONDUCTOR CONTACTS
FONASH, SJ
JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) : 496 - 498
[45] ON BARRIER HEIGHT INHOMOGENEITIES AT POLYCRYSTALLINE METAL-SEMICONDUCTOR CONTACTS
OSVALD, J
SOLID-STATE ELECTRONICS, 1992, 35 (11) : 1629 - 1632
[46] DETERMINATION OF LOW BARRIER HEIGHTS IN METAL-SEMICONDUCTOR CONTACTS
TANTRAPORN, W
JOURNAL OF APPLIED PHYSICS, 1970, 41 (11) : 4669 - +
[47] Metal-semiconductor contacts on MOVPE-grown ZnSe
Lampe, S
Deker, J
Heuken, M
BLUE LASER AND LIGHT EMITTING DIODES, 1996, : 453 - 456
[48] APPLICATION OF AUGER DEPTH PROFILING TO METAL-SEMICONDUCTOR CONTACTS
SINGER, KE
THIN SOLID FILMS, 1979, 57 (01) : 115 - 126
[49] ON THE DIRECT CURRENT VOLTAGE CHARACTERISTIC OF METAL-SEMICONDUCTOR CONTACTS
LEHOVEC, K
PHYSICAL REVIEW, 1951, 82 (05): : 764 - 764
[50] Properties of Mott contacts with an ultralow metal-semiconductor barrier
V. I. Shashkin
A. V. Murel’
Physics of the Solid State, 2008, 50

← 1 2 3 4 5 →