Tests on instrumentation amplifiers exposed to neutron radiation have been done. The tested devices were commercial instrumentation amplifiers or designed with rad-tol commercial operational amplifiers. The results show changes in frequency behavior, gain, offset voltage, output saturation voltages, and quiescent current. The radiation tolerance is bigger in amplifiers with JFET input stage or with large frequency bandwidth and is smaller if the amplifier has been designed for reducing the power consumption. The IAs built with OPAMPs have a higher tolerance than the commercial ones, but they have disadvantages: high temperature influence, low CMRR, etc.
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Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Chin, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Chin, Xian 710071, Peoples R China
Li, C. H.
Lu, H. L.
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Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Chin, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Chin, Xian 710071, Peoples R China
Lu, H. L.
Zhang, Y. M.
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Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Chin, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Chin, Xian 710071, Peoples R China
Zhang, Y. M.
Liu, M.
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Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Chin, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Chin, Xian 710071, Peoples R China
Liu, M.
Zhao, X. H.
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Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Chin, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Chin, Xian 710071, Peoples R China