HYDROGEN AND DEUTERIUM MIGRATION IN ANNEALED PLASMA-DEPOSITED SILICON-NITRIDE FILMS

被引：4
|
作者：
SAVALL, C
BRUYERE, JC
机构：
[1] LEPES, CNRS, associated to Université Joseph Fourier, 38042 Grenoble Cedex 9, BP 166, F
来源：
THIN SOLID FILMS | 1995年 / 258卷 / 1-2期
关键词：
ANNEALING; DEUTERIUM; HYDROGEN; PLASMA PROCESSING AND DEPOSITION;
D O I：
10.1016/0040-6090(94)09476-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The incorporation of hydrogen in nearly stoichiometric silicon nitride deposited by plasma enhanced chemical vapour deposition is investigated by infrared spectroscopy. During the deposition, deuterium is added to the silane, nitrogen and helium mixture. After annealing up to 1000 degrees C, some films show a very large increase of the 2200 cm(-1) absorption peak. We conclude from analysis of isotopic substitution that the free hydrogen atom does not contribute to building new Si-H bonds. This result agrees with our previous conclusion on a continuous and large change in the oscillator strength of the Si-H stretching mode.
引用
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页码：1 / 4
页数：4
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