INSITU DOPING IN SILICON SELECTIVE EPITAXIAL-GROWTH AT 800-DEGREES-C BY ULTRALOW-PRESSURE CHEMICAL VAPOR-DEPOSITION

被引：4
|
作者：
YEW, TR
REIF, R
机构：
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 19期
关键词：
D O I：
10.1063/1.103993
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In situ doping capabilities, n and p type, in silicon selective epitaxial growth by ultralow-pressure chemical vapor deposition are presented in this letter. Selective epitaxial layers were grown at 800 °C after an in situ Ar/H2 plasma sputter clean. The n- and p-type dopant sources were 1000 ppm arsine and 1000 ppm diborane, respectively, in silane mixed with pure silane for dilution. It was found that high structural quality in situ doped selective epitaxial layers with n- or p-type dopant concentration of 10 18 cm-3 can be obtained.
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页码：2010 / 2012
页数：3
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