共 50 条
- [41] ANNEALING OF METASTABLE FRENKEL PAIRS FORMED IN N-TYPE GERMANIUM AS A RESULT OF LOW-TEMPERATURE GAMMA-IRRADIATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (04): : 466 - 467
- [42] EFFICIENCY OF FORMATION OF ELECTRON TRAPS IN GALLIUM-ARSENIDE AS A RESULT OF HIGH-TEMPERATURE ELECTRON-IRRADIATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (07): : 707 - 709
- [45] QUANTITATIVE-DETERMINATION OF IMPURITIES IN GALLIUM-ARSENIDE BY LOW-TEMPERATURE LUMINESCENCE AND ELECTRONIC RAMAN-SCATTERING ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1989, 198 : 144 - ANYL
- [46] LOW-TEMPERATURE LOCALIZATION OF ELECTRONS IN COMPENSATED GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (05): : 829 - &
- [47] Infrared reflection study of the photodissociation of donor-acceptor pairs in the low-temperature phase of tetratiafulvalene-tetrabromo-p-benzoquinone crystal PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 1, 2011, 8 (01): : 96 - 99
- [48] SPATIAL-DISTRIBUTION OF ELECTRICALLY ACTIVE-CENTERS IN NORMAL-TYPE GALLIUM-ARSENIDE AND ITS CHANGES AS A RESULT OF GAMMA-IRRADIATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (09): : 997 - 999
- [49] First measurement of Gallium Arsenide as a low-temperature calorimeter EUROPEAN PHYSICAL JOURNAL C, 2024, 84 (07):
- [50] SILICON DONOR-ACCEPTOR PAIRS AND SILICON-CARBON COMPLEXES IN GALLIUM-PHOSPHIDE JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (03): : 627 - 632