EFFECTS OF RESISTANCE IN AVALANCHE TRANSISTOR PULSE CIRCUITS

被引：0

作者：

HAMILTON, DJ

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1960年 / 48卷 / 08期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1502 / 1502

页数：1

共 50 条

[1] PHYSICAL PRINCIPLES OF AVALANCHE TRANSISTOR PULSE CIRCUITS
HAMILTON, DJ
GIBBONS, JF
SHOCKLEY, W
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1959, 47 (06): : 1102 - 1108
[2] AVALANCHE TRANSISTOR CIRCUITS
HENEBRY, WM
REVIEW OF SCIENTIFIC INSTRUMENTS, 1961, 32 (11): : 1198 - &
[3] The Design and Analysis of Pulse Generator Electronic Circuits based on Avalanche Transistor
Zhou Jincheng
Zhang Minghui
MULTI-FUNCTIONAL MATERIALS AND STRUCTURES ENGINEERING, ICMMSE 2011, 2011, 304 : 334 - 339
[4] NANOSECOND AVALANCHE TRANSISTOR CIRCUITS
GYGI, E
SCHNEIDER, F
NUCLEAR INSTRUMENTS & METHODS, 1963, 20 (JAN): : 352 - 354
[5] A Nanosecond Pulse Generator Based on Avalanche Transistor
Zhou, K.
Huang, C. L.
Lu, M.
PROCEEDINGS OF 2016 16TH INTERNATIONAL CONFERENCE ON GROUND PENETRATING RADAR (GPR), 2016,
[6] CALCULATION OF TRANSIENTS IN AN AVALANCHE TRANSISTOR PULSE CIRCUIT
DYAKONOV, VP
TELECOMMUNICATIONS AND RADIO ENGINEERING, 1975, 29 (02) : 107 - 111
[7] An accurate transistor model for simulating avalanche-breakdown effects in Si bipolar circuits
Rickelt, M
Rein, HM
PROCEEDINGS OF THE 2001 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2001, : 34 - 37
[8] A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuits
Rickelt, M
Rein, HM
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2002, 37 (09) : 1184 - 1197
[9] INTEGRATED PULSE CIRCUITS BASED ON AVALANCHE TRANSISTORS
DYAKONOV, VP
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR, 1971, 14 (06): : 1695 - &
[10] LIMITING CAPABILITIES OF AVALANCHE TRANSISTORS IN PULSE CIRCUITS
DYAKONOV, VP
TELECOMMUNICATIONS AND RADIO ENGINEERING, 1976, 30 (07) : 116 - 123

← 1 2 3 4 5 →