BALLISTIC ELECTRON STUDIES AND MODIFICATION OF THE AU/SI INTERFACE

被引：29
|
作者：
FERNANDEZ, A
HALLEN, HD
HUANG, T
BUHRMAN, RA
SILCOX, J
机构：
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 26期
关键词：
D O I：
10.1063/1.103754
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The Au/Si(111) interface has been investigated with ballistic electron emission microscopy. The Schottky barrier (SB) height and ballistic transmittance have been measured on interfaces which have been prepared with different types of monolayer-level dopants. Transmission rates but not the SB are found to depend strongly on the resulting degree of interdiffusion of the Au and Si at the interface. An irreversible modification in the transport properties of the buried interface can occur when the system is stressed with electrons injected at several volts above the Schottky barrier.
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页码：2826 / 2828
页数：3
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