Elastic scattering and the lateral resolution of ballistic electron emission microscopy: Focusing effects on the Au/Si interface

被引：0
|
作者：
机构：
来源：
Phys Rev Lett | / 5卷 / 807期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Elastic scattering and the lateral resolution of ballistic electron emission microscopy: Focusing effects on the Au/Si interface
    GarciaVidal, FJ
    deAndres, PL
    Flores, F
    PHYSICAL REVIEW LETTERS, 1996, 76 (05) : 807 - 810
  • [2] ROLE OF ELASTIC-SCATTERING IN BALLISTIC-ELECTRON-EMISSION MICROSCOPY OF AU/SI(001) AND AU/SI(111) INTERFACES
    SCHOWALTER, LJ
    LEE, EY
    PHYSICAL REVIEW B, 1991, 43 (11) : 9308 - 9311
  • [3] Does elastic scattering in metal decrease the ballistic electron emission microscopy resolution?
    Denissov, VP
    Klemeshev, VA
    PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1999, 5-6 : 89 - 94
  • [4] Erasable nanometer-scale modification at the Au/Si interface by ballistic electron emission microscopy
    Hasegawa, Y
    Akiyama, K
    Ono, M
    Kahng, SJ
    Xue, QK
    Nakayama, K
    Hashizume, T
    Sakurai, T
    APPLIED PHYSICS LETTERS, 1999, 75 (23) : 3668 - 3670
  • [5] ELASTIC-SCATTERING IN BALLISTIC-ELECTRON-EMISSION-MICROSCOPY STUDIES OF THE EPITAXIAL NISI2/SI(111) INTERFACE
    FERNANDEZ, A
    HALLEN, HD
    HUANG, T
    BUHRMAN, RA
    SILCOX, J
    PHYSICAL REVIEW B, 1991, 44 (07): : 3428 - 3431
  • [6] Ballistic electron emission microscopy and spectroscopy of the Au/GaAs(110) interface
    Stockman, L
    van Kempen, H
    SURFACE SCIENCE, 1998, 408 (1-3) : 232 - 236
  • [7] Use of ballistic electron emission microscopy to observe the diversity of fabricated nanometer features at the Au/Si interface
    Qiu, X
    Shang, G
    Wang, C
    Bai, C
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (Suppl 1): : S91 - S94
  • [8] Use of ballistic electron emission microscopy to observe the diversity of fabricated nanometer features at the Au/Si interface
    Qiu, X.
    Shang, G.
    Wang, C.
    Bai, C.
    Applied Physics A: Materials Science and Processing, 1998, 66 (SUPPL. 1):
  • [9] Use of ballistic electron emission microscopy to observe the diversity of fabricated nanometer features at the Au/Si interface
    X. Qiu
    G. Shang
    C. Wang
    C. Bai
    Applied Physics A, 1998, 66 : S91 - S94
  • [10] BALLISTIC-ELECTRON-EMISSION MICROSCOPY OF THE AN-SI (100) INTERFACE
    CORATGER, R
    AJUSTRON, F
    BEAUVILLAIN, J
    JOURNAL DE PHYSIQUE III, 1993, 3 (12): : 2211 - 2220
12345